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Comprehensive molecular dynamics simulations of the stacking fault tetrahedron interacting with a mixed dislocation at elevated temperature
Fan, Haidong1; Wang, Qingyuan1,2; Ouyang, Chaojun3
Corresponding AuthorFan, Haidong
2015-10-01
Source PublicationJOURNAL OF NUCLEAR MATERIALS
ISSN0022-3115
Volume465Pages:245-253
SubtypeArticle
Abstractdefect-free channels were frequently observed in irradiated materials, i.e. copper, as a result of the stacking fault tetrahedron (SFT) interactions with dislocations. However, the underlying mechanisms for this process are still unclear to date. To address them, a comprehensive study on the interactions between SFTs and mixed dislocations was performed using molecular dynamics simulations. In particular, eight interaction geometries were considered, in terms of the dislocation Burgers vector directions, dislocation gliding directions and intersection positions on SFT. Various interaction outcomes were revealed after dislocation detachment. (1) SFT is fully absorbed through the transformation into Lomer dislocations, and subsequently moves out of free surfaces along the dislocation. (2) SFT is partially absorbed with the absorbed SFT base moving out of free surfaces along the dislocation. (3) SFT is not absorbed but sheared with ledges left on the SFT faces. (4) SFT is unaffected by the mixed dislocation. The current simulations, especially the full SFT absorption, provide important insights into the forming mechanisms of defect-free channels in irradiated materials. (C) 2015 Elsevier B.V. All rights reserved.
KeywordStacking Fault Tetrahedron Full Defect Absorption Molecular Dynamics Simulations Defect-free Channels Mixed Dislocations
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
DOI10.1016/j.jnucmat.2015.05.047
WOS Subject ExtendedMaterials Science ; Nuclear Science & Technology ; Mining & Mineral Processing
Indexed BySCI
WOS KeywordTRANSMISSION ELECTRON-MICROSCOPY ; ATOMIC-SCALE ; GLIDING DISLOCATIONS ; IRRADIATED COPPER ; SCREW DISLOCATION ; QUENCHED GOLD ; FRANK LOOPS ; LOCALIZATION ; DEFORMATION ; FCC
Language英语
WOS SubjectMaterials Science, Multidisciplinary ; Nuclear Science & Technology ; Mining & Mineral Processing
WOS IDWOS:000364890300032
Funding OrganizationNatural Science Foundation of China(11302140 ; Project of Sichuan Sci-Tech Support Plan(2015GZ0245) ; 11327801)
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Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imde.ac.cn/handle/131551/13867
Collection山地灾害与地表过程重点实验室
Affiliation1.Sichuan Univ, Dept Mech, Chengdu 610065, Sichuan, Peoples R China
2.Chengdu Univ, Adv Res Inst, Chengdu 610106, Sichuan, Peoples R China
3.Chinese Acad Sci, Inst Mt Hazards & Environm, Chengdu 610041, Sichuan, Peoples R China
Recommended Citation
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Fan, Haidong,Wang, Qingyuan,Ouyang, Chaojun. Comprehensive molecular dynamics simulations of the stacking fault tetrahedron interacting with a mixed dislocation at elevated temperature[J]. JOURNAL OF NUCLEAR MATERIALS,2015,465:245-253.
APA Fan, Haidong,Wang, Qingyuan,&Ouyang, Chaojun.(2015).Comprehensive molecular dynamics simulations of the stacking fault tetrahedron interacting with a mixed dislocation at elevated temperature.JOURNAL OF NUCLEAR MATERIALS,465,245-253.
MLA Fan, Haidong,et al."Comprehensive molecular dynamics simulations of the stacking fault tetrahedron interacting with a mixed dislocation at elevated temperature".JOURNAL OF NUCLEAR MATERIALS 465(2015):245-253.
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